Ordering number : EN6445D
MCH6602
N-Channel Power MOSFET
30V, 0.35A, 3.7 Ω , Dual MCPH6
Features
http://onsemi.com
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Low ON-resistance
Ultrahigh-speed switching
1.5V drive
Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting
Speci ? cations
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Symbol
VDSS
VGSS
ID
Conditions
Ratings
30
±10
0.35
Unit
V
V
A
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
IDP
PD
Tch
Tstg
PW ≤ 10 μ s, duty cycle ≤ 1%
When mounted on ceramic substrate (900mm 2 × 0.8mm) 1unit
1.4
0.8
150
--55 to +150
A
W
°C
°C
This product is designed to “ESD immunity < 200V * ”, so please take care when handling.
* Machine Model
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7022A-006
Product & Package Information
? Package : MCPH6
? JEITA, JEDEC : SC-88, SC-70-6, SOT-363
? Minimum Packing Quantity : 3,000 pcs./reel
6
2.0
5
4
0.15
MCH6602-TL-E
Packing Type : TL
Marking
0 to 0.02
FB
1
0.65
2
3
0.3
TL
Electrical Connection
1 : Source1
6
5
4
2 : Gate1
1
2
3
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
6
5
4
MCPH6
1
2
3
Semiconductor Components Industries, LLC, 2013
August, 2013
82813 TKIM TC-00002986/71112 TKIM/12407 TIIM TC-00000415/70306/ No.6445-1/6
42806PE MSIM TB-00002288/30300 TS (KOTO) TA-2509
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